一本道

By substituting Sc in conventional wurtzite III-nitride semiconductors, AlN and GaN, the resulting ternary ScAlN and ScGaN become ferroelectrics, which will be used in particular for storage-class memory to fill the gap between non-volatile memory (NVM) storage and volatile memory devices. In addition, both ternary nitrides also exhibit strong piezoelectric and nonlinear optical properties and can be integrated with Si and III-nitride technologies. This opens for a wide range of future electronic, optoelectronic, and electromechanical applications. Since these unique properties are built on the uniaxial polar crystal structure, growth of these materials with defect-free single crystals becomes the key. However, synthesis of single-crystal Sc(Al;Ga)N thin films with low defect density is still challenging, which impedes fabrication of devices with high performance. In this project, we will study the growth of electronic-graded ternary Sc(Al;Ga)N ferroelectric semiconductors using an industrial compatible magnetron sputter epitaxy (MSE) technique for developing emerging ferroelectric devices.

The research is supported by several funding sources:
Funding source: Olle Engkvists Stiftelse
Period: 2025-2028
Postdoc: Rohini Mallikarjun Sanikop
Funding source: LiU, Material Science for Sustainable Technologies (MATTER )
Period: 2025-2026
Equipment: Ferroelectric Analyzer
Funding source: Carl Tryggers Stiftelse
Period: 2025-2027
Equipment: Ferroelectric Analyzer

addresses these challenges by developing low-temperature, environmentally friendly manufacturing processes for fabricating high-brightness and efficient red(R)/green(G)/blue(B) 碌-LEDs, advancing sustainable innovation while pushing the boundaries of state-of-the-art technology.

Funding source: WISE (Wallenberg Initiative Materials Science for Sustainability)
Research grant for industrial postdoc with Polar-Light Technologies AB, Sweden
Period: 2025-2027
Postdoc: Sachin Sharma

Hydrogen (H2) has extremely high gravimetric energy density, which is considering as a very important and promising energy. It has capability for the use of, such as transportation, existing industrial infrastructure, and replacing fossil fuels in power plants. However, the production of H2 is still generated from fossil fuels through steam methane reforming, methane partial oxidation, and coal gasi铿乧ation processes, which results in huge global CO2 emissions. Alternatively, production of ‘green’ hydrogen fuel by photocatalytic water splitting provides one of the most promising pathways for carbon neutrality.

In this project. We aim to develop a novel tandem photoelectrode using heterogenous photocatalytical-active indium gallium nitride (InGaN) and tantalum oxynitride (Ta3(ON)5) semiconductor nanostructures for efficiently generate ‘green’ hydrogen fuel

Funding source: Olle Engkvists Stiftelse
Period: 2024-2027
Postdoc: Shailesh Kalal

The purpose of this project is to develop an in-situ surface characterization technique, reflection high energy electron diffraction (RHEED), to study the crystalline structure, morphology, and composition of thin film during growth and post-growth treatment in an industrial compatible magnetron sputter epitaxy (MSE). With such support, our pioneering study on the development of electronic-grade thick GaN film, ternary III-nitride alloys (i.e., InGaN, AlGaN, and InAlN) pseudo-substrates and heterostructures will be realized for the use of fabricating energy-saving LEDs and high-efficiency photovoltaics.

Funding source: Carl Tryggers Stiftelse
Period: 2023-2026
Equipment: RHEED